2024年1月10日发(作者：宝马x5新款图片)

元器件交易网o–SwitchReflectivePhototransistor g distance -tight a visible-light intercepting filter whichallows objects to be sensed without beinggreatly influenced by the light radiated fromfluorescent d with M2 with soldering terminals (EE-SF5).Model with PCB terminals (EE-SF5-B).EE–SF5(–B)DimensionsMattedAInternal CircuitC1.9 dia.2.2 dia. holeKETerminal meAnodeCathodeCollectorEmitterUnless otherwise specified, thetolerances are as shown , 1.5DimensionsFour,0.5Tolerance±0.3±0.375±0.45±0.55±0.657.6±1Four, 0.257.62±0.3EE-SF53 mm max.3 t mm v 66 t mm v 102.54±0.22.54±0.2EE-SF5-B10 t mm v 1818 t mm v 30 Absolute Maximum Ratings (Ta = 25°C)ItemEmitterForward currentPulse forward currentReverse voltageDetectorCollector–Emitter voltageEmitter–Collector voltageCollector currentCollector dissipationAmbient temperatureOperatingStorageSolderingNote:IFIFPVRVCEOVECOICPCToprTstgTsolSymbolRated value50 mA (see note 1)1 A (see note 2)4 V30 V---20 mA100 mW (see note 1)–25°C to 80°C–30°C to 80°C260°C1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.2. The pulse width is 10 ?s maximum with a frequency of 100 Hz.

元器件交易网 Electrical and Optical Characteristics (Ta = 25°C)ItemEmitterForward voltageReverse currentPeak emission wavelengthDetectorLight currentIRλPILSymbolVFValue1.2 V typ., 1.5 V max.0.01 ?A typ., 10 ?A max.940 nm typ.200 ?A min., 2,000 ?Amax.2 nA typ., 200 nA max.2 ?A max.---850 nm typ.30 ?s typ.30 ?s = 30 mAVR = 4 VIF = 20 mAIF = 20 mA, VCE = 10 VWhite paper with a reflection ratioof 90%, d = 5 mm (see note)VCE = 10 V, 0 ?xIF = 20 mA, VCE = 10 V with noreflection---VCE = 10 VVCC = 5 V, RL = 1 k?, IL = 1 mAVCC = 5 V, RL = 1 k?, IL = 1 mAConditionDark currentLeakage currentCollector–Emitter saturated voltagePeak spectral sensitivity wavelengthRising timeFalling timeNote:IDILEAKVCE (sat)λPtrtfThe letter “d” indicates the distance between the top surface of the sensor and the sensing ering DataForward Current vs. CollectorDissipation Temperature RatingCollector

dissipation

Pc

(mW)Light Current vs. Forward CurrentCharacteristics (Typical)Ta = 25°CVCE = 10 Vd = 5 mmSensing object:White paper with areflection factor of90%Light Current vs. Collector–EmitterVoltage Characteristics (Typical) Ta =25°Cd = 5 mmSensing object:White paper witha reflection fac-tor of 90%IF = 40 mAForward

current

I

F

(mA)Light

current

I

L

(mA)Light

current

I

L

(mA)IF = 30 mAIF = 20 mAIF = 10 mAAmbient temperature Ta (°C)Forward current IF (mA)Collector–Emitter voltage VCE (V)Relative Light Current vs. AmbientTemperature Characteristics(Typical)Relative

light

current

I

L

(%)IF

= 20 mAVCE = 5 VDark Current vs. AmbientTemperature Characteristics(Typical)VCE = 10 V0 ?xResponse Time vs. LoadResistance Characteristics(Typical)Vcc = 5 VTa = 25°CAmbient temperature Ta (°C)Ambient temperature Ta (°C)Response

time

tr,

tf

(

?

s)Dark

current

I

D

(nA)Load resistance RL (k?)

元器件交易网sing Distance Characteristics(Typical)Ta = 25°CVCE = 10 VSensing object: White paperwith a reflection factor of 90%)

?

A(

LI

tnerruc

thgiLDistance d (mm)Sensing Angle Characteristics(Typical))%(

LI

tnerruc

thgil

Ta = 25°CevIitVF = 20 mAaCE = 10 VleSensing object: White paperRwith a reflection factor of 90%d = 5 mmAngle deviation θ (°)

Sensing Position Characteristics(Typical))%IF = 20 mAV(

LTa = 25CE = 5 V°C

I

(a) : d

tn(b) : d1 = 3 mm1 = 5 mmerSensing ob-ruject: White pa-cper with a re-

thflection factorgiof 90%l

evitaleRDistance d2 (mm)Sensing Angle Characteristics(Typical))%(

LI

tnerruc

thgTa = 25°Cil

eSensingIF = 20 mAvobjectVid = 5 mmCE = 10 VtaSensing object:leWhite paper withRa reflection factorof 90%Angle deviation θ (°)Sensing Position Characteristics(Typical))%I(VF = 20 mACE = 5 V

LTa = 25°C

I

d1 = 5 mmtneSensing object:rrWhite paperucwith a reflectionPhototransistor side

tfactor of 90%LED sidehgil

evdit5 mm1 =aleRDistance d2 (mm)Response Time MeasurementCircuitInputOutput9010 % %InputOutput

更多推荐

新款,元器件,交易网